Optical and structural properties of strained InAlAs/InAsxP1-x multi-quantum wells grown by solid source molecular beam epitaxy

Journal Article (Journal Article)

The growth of InP/InAsxP1-x and InAlAs/InAsxP1-x heterostructures was studied using P and As sources. The As4 flux is incorporated much less efficiently into higher As percentage InAsP due to the higher strain in the grown InAsP film. The InP/InAsP multiple quantum wells showed photoluminescence at full width at half maximums of 12-19 meV at 4.2 K.

Full Text

Duke Authors

Cited Authors

  • Kim, TH; Brown, AS; Metzger, RA

Published Date

  • January 1, 1999

Published In

Volume / Issue

  • 86 / 5

Start / End Page

  • 2622 - 2627

International Standard Serial Number (ISSN)

  • 0021-8979

Digital Object Identifier (DOI)

  • 10.1063/1.371101

Citation Source

  • Scopus