Arsenic incorporation in InAsP/InP quantum wells

Published

Journal Article

InAsP/InP multiquantum well structures were grown by solid source molecular beam epitaxy using either As2 or As4 over a substrate temperature range of 420-535 °C. All quantum wells had similar arsenic compositions with a 2.2% standard deviation regardless of arsenic species or growth temperature. This temperature insensitivity of arsenic incorporation in InAsP is in sharp contrast to InGaAsP in which arsenic composition is very sensitive to both substrate temperature and gallium percentage in the compound. The insensitivity of arsenic incorporation in InAsP to substrate temperature may result from growth in a phosphorus rich condition with indium as the only available cation.

Full Text

Duke Authors

Cited Authors

  • Dagnall, G; Brown, AS; Stock, SR

Published Date

  • January 1, 1999

Published In

Volume / Issue

  • 28 / 10

Start / End Page

  • 1108 - 1110

International Standard Serial Number (ISSN)

  • 0361-5235

Digital Object Identifier (DOI)

  • 10.1007/s11664-999-0246-0

Citation Source

  • Scopus