The behavior of unintentional impurities in Ga0.47 In0.53As grown by MBE


Journal Article

A number of factors contribute to the high n-type background carrier concentration (high 1015 to low 1016 cm-3) measured in MBE Ga0.47In0.53As lattice-matched to InP. The results of this study indicate that the outdiffusion of impurities from InP substrates into GalnAs epitaxial layers can account for as much as two-thirds of the background carrier concentration and can reduce mobilities by as much as 40%. These impurities and/or defects can be gettered at the surfaces of the InP by heat treatment and then removed by polishing. The GalnAs epitaxial layers grown on the heat-treated substrates have significantly improved electrical properties. Hall and SIMS measurements indicate that both donors and acceptors outdiffuse into the epitaxial layers during growth resulting in heavily compensated layers with reduced mobilities. The dominant donor species was identified by SIMS as Si, and the dominant acceptors as Fe, Cr and Mn. © 1985 AIME.

Full Text

Duke Authors

Cited Authors

  • Brown, AS; Palmateer, SC; Wicks, GW; Eastman, LF; Calawa, AR

Published Date

  • May 1, 1985

Published In

Volume / Issue

  • 14 / 3

Start / End Page

  • 367 - 378

Electronic International Standard Serial Number (EISSN)

  • 1543-186X

International Standard Serial Number (ISSN)

  • 0361-5235

Digital Object Identifier (DOI)

  • 10.1007/BF02661228

Citation Source

  • Scopus