Real time ellipsometry for monitoring plasma-assisted epitaxial growth of GaN

Journal Article (Journal Article)

GaN is grown on Si-face 4H-SiC(0 0 0 1) substrates using remote plasma-assisted methods including metalorganic chemical vapour deposition (RP-MOCVD) and molecular beam epitaxy (MBE). Real time spectroscopic ellipsometry is used for monitoring all the steps of substrate pre-treatments and the heteroepitaxial growth of GaN on SiC. Our characterization emphasis is on understanding the nucleation mechanism and the GaN growth mode, which depend on the SiC surface preparation. © 2006 Elsevier B.V. All rights reserved.

Full Text

Duke Authors

Cited Authors

  • Bruno, G; Losurdo, M; Giangregorio, MM; Capezzuto, P; Brown, AS; Kim, TH; Choi, S

Published Date

  • October 31, 2006

Published In

Volume / Issue

  • 253 / 1 SPEC. ISS.

Start / End Page

  • 219 - 223

International Standard Serial Number (ISSN)

  • 0169-4332

Digital Object Identifier (DOI)

  • 10.1016/j.apsusc.2006.05.129

Citation Source

  • Scopus