155- and 213-GHz AlInAs/GaInAs/InP HEMT MMIC Oscillators
Publication
, Journal Article
Rosenbaum, SE; Jelloian, LM; Matloubian, M; Larson, LE; Nguyen, L; Thompson, MA; Kormanyos, BK; Brown, AS; Katehi, LPB; Rebeiz, GM
Published in: IEEE Transactions on Microwave Theory and Techniques
January 1, 1995
We report on the design and measurement of monolithic 155- and 213-GHz quasi-optical oscillators using AlInAs/GaInAs/InP HEMT' s. These results are believed to be the highest frequency three-terminal oscillators reported to date. The indium concentration in the channel was 80% for high sheet charge and mobility. The HEMT gates were fabricated with self-aligned sub-tenth-micrometer electron-beam techniques to achieve gate lengths on the order of 50 nm and drain-source spacing of 0.25 μm. Planar antennas were integrated into the fabrication process resulting in a compact and efficient quasi-optical Monolithic Millimeter-wave Integrated Circuit (MMIC) oscillator. © 1995 IEEE
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Published In
IEEE Transactions on Microwave Theory and Techniques
DOI
EISSN
1557-9670
ISSN
0018-9480
Publication Date
January 1, 1995
Volume
43
Issue
4
Start / End Page
927 / 932
Related Subject Headings
- Networking & Telecommunications
- 1005 Communications Technologies
- 0906 Electrical and Electronic Engineering
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Chicago
ICMJE
MLA
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Rosenbaum, S. E., Jelloian, L. M., Matloubian, M., Larson, L. E., Nguyen, L., Thompson, M. A., … Rebeiz, G. M. (1995). 155- and 213-GHz AlInAs/GaInAs/InP HEMT MMIC Oscillators. IEEE Transactions on Microwave Theory and Techniques, 43(4), 927–932. https://doi.org/10.1109/22.375256
Rosenbaum, S. E., L. M. Jelloian, M. Matloubian, L. E. Larson, L. Nguyen, M. A. Thompson, B. K. Kormanyos, A. S. Brown, L. P. B. Katehi, and G. M. Rebeiz. “155- and 213-GHz AlInAs/GaInAs/InP HEMT MMIC Oscillators.” IEEE Transactions on Microwave Theory and Techniques 43, no. 4 (January 1, 1995): 927–32. https://doi.org/10.1109/22.375256.
Rosenbaum SE, Jelloian LM, Matloubian M, Larson LE, Nguyen L, Thompson MA, et al. 155- and 213-GHz AlInAs/GaInAs/InP HEMT MMIC Oscillators. IEEE Transactions on Microwave Theory and Techniques. 1995 Jan 1;43(4):927–32.
Rosenbaum, S. E., et al. “155- and 213-GHz AlInAs/GaInAs/InP HEMT MMIC Oscillators.” IEEE Transactions on Microwave Theory and Techniques, vol. 43, no. 4, Jan. 1995, pp. 927–32. Scopus, doi:10.1109/22.375256.
Rosenbaum SE, Jelloian LM, Matloubian M, Larson LE, Nguyen L, Thompson MA, Kormanyos BK, Brown AS, Katehi LPB, Rebeiz GM. 155- and 213-GHz AlInAs/GaInAs/InP HEMT MMIC Oscillators. IEEE Transactions on Microwave Theory and Techniques. 1995 Jan 1;43(4):927–932.
Published In
IEEE Transactions on Microwave Theory and Techniques
DOI
EISSN
1557-9670
ISSN
0018-9480
Publication Date
January 1, 1995
Volume
43
Issue
4
Start / End Page
927 / 932
Related Subject Headings
- Networking & Telecommunications
- 1005 Communications Technologies
- 0906 Electrical and Electronic Engineering