155- and 213-GHz AlInAs/GaInAs/InP HEMT MMIC Oscillators

Journal Article (Journal Article)

We report on the design and measurement of monolithic 155- and 213-GHz quasi-optical oscillators using AlInAs/GaInAs/InP HEMT' s. These results are believed to be the highest frequency three-terminal oscillators reported to date. The indium concentration in the channel was 80% for high sheet charge and mobility. The HEMT gates were fabricated with self-aligned sub-tenth-micrometer electron-beam techniques to achieve gate lengths on the order of 50 nm and drain-source spacing of 0.25 μm. Planar antennas were integrated into the fabrication process resulting in a compact and efficient quasi-optical Monolithic Millimeter-wave Integrated Circuit (MMIC) oscillator. © 1995 IEEE

Full Text

Duke Authors

Cited Authors

  • Rosenbaum, SE; Jelloian, LM; Matloubian, M; Larson, LE; Nguyen, L; Thompson, MA; Kormanyos, BK; Brown, AS; Katehi, LPB; Rebeiz, GM

Published Date

  • January 1, 1995

Published In

Volume / Issue

  • 43 / 4

Start / End Page

  • 927 - 932

Electronic International Standard Serial Number (EISSN)

  • 1557-9670

International Standard Serial Number (ISSN)

  • 0018-9480

Digital Object Identifier (DOI)

  • 10.1109/22.375256

Citation Source

  • Scopus