The effect of InP substrate misorientation on GaInAs-AlInAs interface and alloy quality

Published

Journal Article

The quality of GaInAs-AlInAs epitaxial layers is found to be critically dependent on the degree of (100)-InP substrate misorientation. The alloy quality of both materials is improved when the substrate is misoriented 4°off the (100). The heterojunction interface quality as determined by the full width at half-maximum of quantum-well photoluminescence is also improved when a substrate misoriented by 4°is used. A degradation of both alloy and interface quality as compared to material on (100) InP is observed when the misorientation is 2°. These effects are also observed for strained quantum-well structures.

Full Text

Duke Authors

Cited Authors

  • Brown, AS; Mishra, UK; Henige, JA; Delaney, MJ

Published Date

  • December 1, 1988

Published In

Volume / Issue

  • 64 / 7

Start / End Page

  • 3476 - 3480

International Standard Serial Number (ISSN)

  • 0021-8979

Digital Object Identifier (DOI)

  • 10.1063/1.341482

Citation Source

  • Scopus