Effect of growth conditions on the electrical and optical properties of Alx In1-x As (0.48<x<0.7)-Ga0.47 In 0.53 As heterostructures
Publication
, Journal Article
Brown, AS; Henige, JA; Schmitz, AE; Larson, LE
Published in: Applied Physics Letters
December 1, 1993
An increase of the Al- content of AlInAs layers above that of the composition which is lattice matched to InP (Al0.48In 0.52As) has been shown to lead to increased Schottky barrier height [Lin et al., Appl. Phys. Lett. 49, 1593 (1986)]. This technique has been used to realize improved gate-to-drain breakdown voltage in AlInAs-GaInAs modulation-doped transistors designed for power applications. This letter reports the observation of an optimum growth temperature regime for the Al-rich Schottky layers in the modulation-doped structure. Growth in this regime results in the highest conductivity for modulation-doped structures as well as the highest quality interface formation as determined from low temperature photoluminescence measurements.
Duke Scholars
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1993
Volume
62
Issue
1
Start / End Page
66 / 68
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
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Brown, A. S., Henige, J. A., Schmitz, A. E., & Larson, L. E. (1993). Effect of growth conditions on the electrical and optical properties of Alx In1-x As (0.48<x<0.7)-Ga0.47 In 0.53 As heterostructures. Applied Physics Letters, 62(1), 66–68. https://doi.org/10.1063/1.108821
Brown, A. S., J. A. Henige, A. E. Schmitz, and L. E. Larson. “Effect of growth conditions on the electrical and optical properties of Alx In1-x As (0.48<x<0.7)-Ga0.47 In 0.53 As heterostructures.” Applied Physics Letters 62, no. 1 (December 1, 1993): 66–68. https://doi.org/10.1063/1.108821.
Brown AS, Henige JA, Schmitz AE, Larson LE. Effect of growth conditions on the electrical and optical properties of Alx In1-x As (0.48<x<0.7)-Ga0.47 In 0.53 As heterostructures. Applied Physics Letters. 1993 Dec 1;62(1):66–8.
Brown, A. S., et al. “Effect of growth conditions on the electrical and optical properties of Alx In1-x As (0.48<x<0.7)-Ga0.47 In 0.53 As heterostructures.” Applied Physics Letters, vol. 62, no. 1, Dec. 1993, pp. 66–68. Scopus, doi:10.1063/1.108821.
Brown AS, Henige JA, Schmitz AE, Larson LE. Effect of growth conditions on the electrical and optical properties of Alx In1-x As (0.48<x<0.7)-Ga0.47 In 0.53 As heterostructures. Applied Physics Letters. 1993 Dec 1;62(1):66–68.
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1993
Volume
62
Issue
1
Start / End Page
66 / 68
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences