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Structural and optical characterization of GaN heteroepitaxial films on SiC substrates

Publication ,  Journal Article
Morse, M; Wu, P; Choi, S; Kim, TH; Brown, AS; Losurdo, M; Bruno, G
Published in: Applied Surface Science
2006

We have estimated the threading dislocation density and type via X-ray diffraction and Williamson-Hall analysis to elicit qualitative information directly related to the electrical and optical quality of GaN epitaxial layers grown by PAMBE on 4H- and 6H-SiC substrates. The substrate surface preparation and buffer choice, specifically: Ga flashing for SiC oxide removal, controlled nitridation of SiC, and use of AlN buffer layers all impact the resultant screw dislocation density, but do not significantly influence the edge dislocation density. We show that modification of the substrate surface strongly affects the screw dislocation density, presumably due to impact on nucleation during the initial stages of heteroepitaxy. © 2006.

Duke Scholars

Published In

Applied Surface Science

DOI

Publication Date

2006

Volume

253

Issue

1 SPEC ISS

Start / End Page

232 / 235

Related Subject Headings

  • Applied Physics
 

Citation

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Morse, M., Wu, P., Choi, S., Kim, T. H., Brown, A. S., Losurdo, M., & Bruno, G. (2006). Structural and optical characterization of GaN heteroepitaxial films on SiC substrates. Applied Surface Science, 253(1 SPEC ISS), 232–235. https://doi.org/10.1016/j.apsusc.2006.05.097
Morse, M., P. Wu, S. Choi, T. H. Kim, A. S. Brown, M. Losurdo, and G. Bruno. “Structural and optical characterization of GaN heteroepitaxial films on SiC substrates.” Applied Surface Science 253, no. 1 SPEC ISS (2006): 232–35. https://doi.org/10.1016/j.apsusc.2006.05.097.
Morse M, Wu P, Choi S, Kim TH, Brown AS, Losurdo M, et al. Structural and optical characterization of GaN heteroepitaxial films on SiC substrates. Applied Surface Science. 2006;253(1 SPEC ISS):232–5.
Morse, M., et al. “Structural and optical characterization of GaN heteroepitaxial films on SiC substrates.” Applied Surface Science, vol. 253, no. 1 SPEC ISS, 2006, pp. 232–35. Manual, doi:10.1016/j.apsusc.2006.05.097.
Morse M, Wu P, Choi S, Kim TH, Brown AS, Losurdo M, Bruno G. Structural and optical characterization of GaN heteroepitaxial films on SiC substrates. Applied Surface Science. 2006;253(1 SPEC ISS):232–235.

Published In

Applied Surface Science

DOI

Publication Date

2006

Volume

253

Issue

1 SPEC ISS

Start / End Page

232 / 235

Related Subject Headings

  • Applied Physics