Structural and optical characterization of GaN heteroepitaxial films on SiC substrates

Published

Journal Article

We have estimated the threading dislocation density and type via X-ray diffraction and Williamson-Hall analysis to elicit qualitative information directly related to the electrical and optical quality of GaN epitaxial layers grown by PAMBE on 4H- and 6H-SiC substrates. The substrate surface preparation and buffer choice, specifically: Ga flashing for SiC oxide removal, controlled nitridation of SiC, and use of AlN buffer layers all impact the resultant screw dislocation density, but do not significantly influence the edge dislocation density. We show that modification of the substrate surface strongly affects the screw dislocation density, presumably due to impact on nucleation during the initial stages of heteroepitaxy. © 2006.

Full Text

Duke Authors

Cited Authors

  • Morse, M; Wu, P; Choi, S; Kim, TH; Brown, AS; Losurdo, M; Bruno, G

Published Date

  • October 31, 2006

Published In

Volume / Issue

  • 253 / 1 SPEC. ISS.

Start / End Page

  • 232 - 235

International Standard Serial Number (ISSN)

  • 0169-4332

Digital Object Identifier (DOI)

  • 10.1016/j.apsusc.2006.05.097

Citation Source

  • Scopus