Room temperature and cryogenic performance of self-aligned AlInAs-GaInAs HEMTs with 0.15 μm gate length


Journal Article

A novel self-aligned technique for 0.15μm gate length AlInAs-GaInAs HEMTs has been demonstrated. Devices with an oxide sidewall yielded an fT of 177 GHz whereas devices with no sidewall exhibited an fT greater than 250 GHz. The difference has been related to process damage during plasma deposition of SiO2. An extrinsic fT of 292 GHz was measured at 77K.

Duke Authors

Cited Authors

  • Mishra, UK; Brown, AS; Jelloian, LM; Thompson, M; Rosenbaum, SE; Nguyen, LD; Solomon, PM; Kiehl, R; Kwark, YH

Published Date

  • December 1, 1990

Published In

Volume / Issue

  • 1288 /

Start / End Page

  • 21 - 29

International Standard Serial Number (ISSN)

  • 0277-786X

Citation Source

  • Scopus