AlInAs/GaInAs on InP HEMTs for low power supply voltage operation of high power-added efficiency microwave amplifiers

Journal Article (Journal Article)

High power-added efficiency microwave power amplifier results are reported for AllnAs/GalnAs on InP HEMTs operated at relatively low power supply voltages (2.5-3V). C-band power amplifiers are reported with power-added efficiencies as high as 67%, and output powers between 200 and 300 mW. This excellent performance at low power supply voltages is attributed to the high gain and low access resistances of the devices, which leads to a high drain efficiency despite the low power supply voltage. © 1993, The Institution of Electrical Engineers. All rights reserved.

Full Text

Duke Authors

Cited Authors

  • Larson, LE; Matloubian, MM; Brown, JJ; Brown, AS; Rhodes, R; Crampton, D; Thompson, M

Published Date

  • January 1, 1993

Published In

Volume / Issue

  • 29 / 15

Start / End Page

  • 1324 - 1326

International Standard Serial Number (ISSN)

  • 0013-5194

Digital Object Identifier (DOI)

  • 10.1049/el:19930888

Citation Source

  • Scopus