AlInAs-GaInAs HEMT’s Utilizing Low-Temperature Alin As Buffers Grown by MBE
Publication
, Journal Article
Brown, AS; Chou, CS; Hooper, CE; Melendes, MA; Thompson, M; Larson, LE; Rosenbaum, SE; Delaney, MJ; Mishra, UK
Published in: IEEE Electron Device Letters
January 1, 1989
Low-temperature AlInAs buffer layers have been incorporated in AlInAs-GaInAs HEMT epitaxial layers grown by MBE. A growth temperature of 150°C followed by a short anneal is shown to eliminate kinks in the device I-V characteristic, sidegating, and to reduce the output conductance dramatically. © 1989 IEEE
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Published In
IEEE Electron Device Letters
DOI
EISSN
1558-0563
ISSN
0741-3106
Publication Date
January 1, 1989
Volume
10
Issue
12
Start / End Page
565 / 567
Related Subject Headings
- Applied Physics
- 4009 Electronics, sensors and digital hardware
- 0906 Electrical and Electronic Engineering
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Brown, A. S., Chou, C. S., Hooper, C. E., Melendes, M. A., Thompson, M., Larson, L. E., … Mishra, U. K. (1989). AlInAs-GaInAs HEMT’s Utilizing Low-Temperature Alin As Buffers Grown by MBE. IEEE Electron Device Letters, 10(12), 565–567. https://doi.org/10.1109/55.43141
Brown, A. S., C. S. Chou, C. E. Hooper, M. A. Melendes, M. Thompson, L. E. Larson, S. E. Rosenbaum, M. J. Delaney, and U. K. Mishra. “AlInAs-GaInAs HEMT’s Utilizing Low-Temperature Alin As Buffers Grown by MBE.” IEEE Electron Device Letters 10, no. 12 (January 1, 1989): 565–67. https://doi.org/10.1109/55.43141.
Brown AS, Chou CS, Hooper CE, Melendes MA, Thompson M, Larson LE, et al. AlInAs-GaInAs HEMT’s Utilizing Low-Temperature Alin As Buffers Grown by MBE. IEEE Electron Device Letters. 1989 Jan 1;10(12):565–7.
Brown, A. S., et al. “AlInAs-GaInAs HEMT’s Utilizing Low-Temperature Alin As Buffers Grown by MBE.” IEEE Electron Device Letters, vol. 10, no. 12, Jan. 1989, pp. 565–67. Scopus, doi:10.1109/55.43141.
Brown AS, Chou CS, Hooper CE, Melendes MA, Thompson M, Larson LE, Rosenbaum SE, Delaney MJ, Mishra UK. AlInAs-GaInAs HEMT’s Utilizing Low-Temperature Alin As Buffers Grown by MBE. IEEE Electron Device Letters. 1989 Jan 1;10(12):565–567.
Published In
IEEE Electron Device Letters
DOI
EISSN
1558-0563
ISSN
0741-3106
Publication Date
January 1, 1989
Volume
10
Issue
12
Start / End Page
565 / 567
Related Subject Headings
- Applied Physics
- 4009 Electronics, sensors and digital hardware
- 0906 Electrical and Electronic Engineering