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IIIB-3 InP-Based Inverted High Electron Mobility Transistors

Publication ,  Journal Article
Schmitz, AE; Nguyen, LD; Brown, AS; Metzger, RA
Published in: IEEE Transactions on Electron Devices
January 1, 1991

Duke Scholars

Published In

IEEE Transactions on Electron Devices

DOI

EISSN

1557-9646

ISSN

0018-9383

Publication Date

January 1, 1991

Volume

38

Issue

12

Start / End Page

2702

Related Subject Headings

  • Applied Physics
  • 0906 Electrical and Electronic Engineering
 

Citation

APA
Chicago
ICMJE
MLA
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Schmitz, A. E., Nguyen, L. D., Brown, A. S., & Metzger, R. A. (1991). IIIB-3 InP-Based Inverted High Electron Mobility Transistors. IEEE Transactions on Electron Devices, 38(12), 2702. https://doi.org/10.1109/16.158723
Schmitz, A. E., L. D. Nguyen, A. S. Brown, and R. A. Metzger. “IIIB-3 InP-Based Inverted High Electron Mobility Transistors.” IEEE Transactions on Electron Devices 38, no. 12 (January 1, 1991): 2702. https://doi.org/10.1109/16.158723.
Schmitz AE, Nguyen LD, Brown AS, Metzger RA. IIIB-3 InP-Based Inverted High Electron Mobility Transistors. IEEE Transactions on Electron Devices. 1991 Jan 1;38(12):2702.
Schmitz, A. E., et al. “IIIB-3 InP-Based Inverted High Electron Mobility Transistors.” IEEE Transactions on Electron Devices, vol. 38, no. 12, Jan. 1991, p. 2702. Scopus, doi:10.1109/16.158723.
Schmitz AE, Nguyen LD, Brown AS, Metzger RA. IIIB-3 InP-Based Inverted High Electron Mobility Transistors. IEEE Transactions on Electron Devices. 1991 Jan 1;38(12):2702.

Published In

IEEE Transactions on Electron Devices

DOI

EISSN

1557-9646

ISSN

0018-9383

Publication Date

January 1, 1991

Volume

38

Issue

12

Start / End Page

2702

Related Subject Headings

  • Applied Physics
  • 0906 Electrical and Electronic Engineering