Interaction of GaN epitaxial layers with atomic hydrogen

Journal Article

GaN surface passivation processes are still under development and among others hydrogen treatments are investigated. In this study, we use non-destructive optical and electrical probes such as spectroscopic ellipsometry (SE) and surface potential Kelvin probe microscopy (SP-KPM) in conjunction with non-contact atomic force microscopy (AFM) for the study of the different reactivity of Ga-polar and N-polar GaN epitaxial layers with atomic hydrogen. The GaN epitaxial layers are grown by molecular beam epitaxy on sapphire (0001) substrates, and GaN and AlN buffer layers are used to grow N-polar and Ga-polar films, respectively. The atomic hydrogen is produced by a remote rf (13.56MHz) H 2 plasma in order to rule out any ion bombardment of the GaN surface and make the interaction chemical. It is found that the interaction of GaN surfaces with atomic hydrogen depends on polarity, with N-polar GaN exhibiting greater reactivity. Furthermore, it is found that atomic hydrogen is effective in the passivation of grain boundaries and surface defects states. © 2004 Elsevier B.V. All rights reserved.

Full Text

Duke Authors

Cited Authors

  • Losurdo, M; Giangregorio, MM; Capezzuto, P; Bruno, G; Namkoong, G; Doolittle, WA; Brown, AS

Published Date

  • August 15, 2004

Published In

Volume / Issue

  • 235 / 3

Start / End Page

  • 267 - 273

International Standard Serial Number (ISSN)

  • 0169-4332

Digital Object Identifier (DOI)

  • 10.1016/j.apsusc.2004.05.152

Citation Source

  • Scopus