Si diffusion in GaInAs-AlInAs high-electron-mobility transistor structures


Journal Article

Secondary-ion-mass spectrometry, Hall-effect measurements, and dc I-V characteristics of 1-μm Ga0.47In0.53As-Al 0.48In0.52As high-electron mobility transistor structures indicate that significant diffusion of Si can occur in these layers. The source of the Si is both the intentional Si used for modulation doping of the devices, and Si which is an unintentional impurity in the Fe-doped InP substrates on which the layer is grown. Preannealing and polishing the substrates can lessen the effect.

Full Text

Duke Authors

Cited Authors

  • Brown, AS; Itoh, T; Wicks, G; Eastman, LF

Published Date

  • December 1, 1986

Published In

Volume / Issue

  • 60 / 10

Start / End Page

  • 3495 - 3498

International Standard Serial Number (ISSN)

  • 0021-8979

Digital Object Identifier (DOI)

  • 10.1063/1.337600

Citation Source

  • Scopus