Si diffusion in GaInAs-AlInAs high-electron-mobility transistor structures
Publication
, Journal Article
Brown, AS; Itoh, T; Wicks, G; Eastman, LF
Published in: Journal of Applied Physics
January 1, 1986
Secondary-ion-mass spectrometry, Hall-effect measurements, and dc I-V characteristics of 1-μm Ga0.47In0.53As-Al 0.48In0.52As high-electron mobility transistor structures indicate that significant diffusion of Si can occur in these layers. The source of the Si is both the intentional Si used for modulation doping of the devices, and Si which is an unintentional impurity in the Fe-doped InP substrates on which the layer is grown. Preannealing and polishing the substrates can lessen the effect.
Duke Scholars
Published In
Journal of Applied Physics
DOI
ISSN
0021-8979
Publication Date
January 1, 1986
Volume
60
Issue
10
Start / End Page
3495 / 3498
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 49 Mathematical sciences
- 40 Engineering
- 09 Engineering
- 02 Physical Sciences
- 01 Mathematical Sciences
Citation
APA
Chicago
ICMJE
MLA
NLM
Brown, A. S., Itoh, T., Wicks, G., & Eastman, L. F. (1986). Si diffusion in GaInAs-AlInAs high-electron-mobility transistor structures. Journal of Applied Physics, 60(10), 3495–3498. https://doi.org/10.1063/1.337600
Brown, A. S., T. Itoh, G. Wicks, and L. F. Eastman. “Si diffusion in GaInAs-AlInAs high-electron-mobility transistor structures.” Journal of Applied Physics 60, no. 10 (January 1, 1986): 3495–98. https://doi.org/10.1063/1.337600.
Brown AS, Itoh T, Wicks G, Eastman LF. Si diffusion in GaInAs-AlInAs high-electron-mobility transistor structures. Journal of Applied Physics. 1986 Jan 1;60(10):3495–8.
Brown, A. S., et al. “Si diffusion in GaInAs-AlInAs high-electron-mobility transistor structures.” Journal of Applied Physics, vol. 60, no. 10, Jan. 1986, pp. 3495–98. Scopus, doi:10.1063/1.337600.
Brown AS, Itoh T, Wicks G, Eastman LF. Si diffusion in GaInAs-AlInAs high-electron-mobility transistor structures. Journal of Applied Physics. 1986 Jan 1;60(10):3495–3498.
Published In
Journal of Applied Physics
DOI
ISSN
0021-8979
Publication Date
January 1, 1986
Volume
60
Issue
10
Start / End Page
3495 / 3498
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 49 Mathematical sciences
- 40 Engineering
- 09 Engineering
- 02 Physical Sciences
- 01 Mathematical Sciences