The effect of strained Al0.7In0.3As emitter layers on abrupt N-p+ AlInAs-GaInAs heterojunction diodes and heterojunction bipolar transistors


Journal Article

Strained AlxIn1-xAs/Ga0.47In0.53As heterojunction N-p+ diodes and heterojunction bipolar transistors (HBTs) have been grown on InP substrates by solid-source molecular-beam epitaxy, fabricated, and characterized. To determine the effects of the conduction-band discontinuity at the emitter-base heterojunction on turn-on voltage and ideality factor, a strained Al0.7In0.3As layer is inserted in the emitter near the base. Changes in transport across the junction are observed as a function of the strained-layer position and thickness. These results were used to implement strained emitter HBTs.

Full Text

Duke Authors

Cited Authors

  • Yi, C; Metzger, RA; Brown, AS

Published Date

  • January 1, 2002

Published In

Volume / Issue

  • 31 / 8

Start / End Page

  • 841 - 847

International Standard Serial Number (ISSN)

  • 0361-5235

Digital Object Identifier (DOI)

  • 10.1007/s11664-002-0193-5

Citation Source

  • Scopus