Study of the dependence of Ga/sub 0.47/In/sub 0.53/As/Al/sub x/ In/sub 1-x/As power HEMT breakdown voltage on Schottky layer design and device layout

Journal Article

Full Text

Duke Authors

Cited Authors

  • Brown, JJ; Brown, AS; Rosenbaum, SE; Schmitz, AS; Matloubian, M; Larson, LE; Melendes, MA; Thompson, MA

Published Date

  • 1993

Published In

Volume / Issue

  • 40 / 11

Start / End Page

  • 2111 - 2112

Published By

International Standard Serial Number (ISSN)

  • 0018-9383

Digital Object Identifier (DOI)

  • 10.1109/16.239781