Microwave Performance of AlInAs-GalnAs HEMT's with 0.2- and 0.1-μm Gate Length
Publication
, Journal Article
Mishra, UK; Brown, AS; Rosenbaum, SE; Hooper, CE; Pierce, MW; Delaney, MJ; Vaughn, S; White, K
Published in: IEEE Electron Device Letters
January 1, 1988
We report on the microwave performance of Al0.48In0.52As-Ga0.47In0.53As on InP HEMT's with 0.2- and 0.1-μm gate length. Devices of 50μm width exhibited extrinsic transconductances of 800 and 1080 mS/mm, respectively. External fT of 120 and 135 GHz, respectively, were measured. A maximum fT of 170 GHz was obtained from a 0.1 x 200-μm2 device. A minimum noise figure of 0.8 dB and associated gain of 8.7 dB were obtained from a single-stage amplifier at Vband. These represent world-record performances from transistors. © 1988 IEEE
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Published In
IEEE Electron Device Letters
DOI
EISSN
1558-0563
ISSN
0741-3106
Publication Date
January 1, 1988
Volume
9
Issue
12
Start / End Page
647 / 649
Related Subject Headings
- Applied Physics
- 0906 Electrical and Electronic Engineering
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Chicago
ICMJE
MLA
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Mishra, U. K., Brown, A. S., Rosenbaum, S. E., Hooper, C. E., Pierce, M. W., Delaney, M. J., … White, K. (1988). Microwave Performance of AlInAs-GalnAs HEMT's with 0.2- and 0.1-μm Gate Length. IEEE Electron Device Letters, 9(12), 647–649. https://doi.org/10.1109/55.20424
Mishra, U. K., A. S. Brown, S. E. Rosenbaum, C. E. Hooper, M. W. Pierce, M. J. Delaney, S. Vaughn, and K. White. “Microwave Performance of AlInAs-GalnAs HEMT's with 0.2- and 0.1-μm Gate Length.” IEEE Electron Device Letters 9, no. 12 (January 1, 1988): 647–49. https://doi.org/10.1109/55.20424.
Mishra UK, Brown AS, Rosenbaum SE, Hooper CE, Pierce MW, Delaney MJ, et al. Microwave Performance of AlInAs-GalnAs HEMT's with 0.2- and 0.1-μm Gate Length. IEEE Electron Device Letters. 1988 Jan 1;9(12):647–9.
Mishra, U. K., et al. “Microwave Performance of AlInAs-GalnAs HEMT's with 0.2- and 0.1-μm Gate Length.” IEEE Electron Device Letters, vol. 9, no. 12, Jan. 1988, pp. 647–49. Scopus, doi:10.1109/55.20424.
Mishra UK, Brown AS, Rosenbaum SE, Hooper CE, Pierce MW, Delaney MJ, Vaughn S, White K. Microwave Performance of AlInAs-GalnAs HEMT's with 0.2- and 0.1-μm Gate Length. IEEE Electron Device Letters. 1988 Jan 1;9(12):647–649.
Published In
IEEE Electron Device Letters
DOI
EISSN
1558-0563
ISSN
0741-3106
Publication Date
January 1, 1988
Volume
9
Issue
12
Start / End Page
647 / 649
Related Subject Headings
- Applied Physics
- 0906 Electrical and Electronic Engineering