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Isolation Effects in Single- and Dual-Plane VLSI Interconnects

Publication ,  Journal Article
Carin, L; Webb, KJ
Published in: IEEE Transactions on Microwave Theory and Techniques
January 1, 1990

The issue of interline coupling in high-speed VLSI interconnects is addressed. A full-wave-based technique is used to numerically solve for the modes and hence the line voltages and currents for multiconductor microstrip. The accuracy of these results is compared with time-domain experimental data. Isolation lines placed between signal lines and grounded at both ends are considered as a means of significantly reducing crosstalk. It is shown that the performance of such lines depends on several factors such as relative mode velocities, signal rise and fall times, and line length. These points are illuminated by considering the effects of isolation lines in two geometries of interest in high-speed integrated circuits. On the basis of these results one can determine the usefulness of isolation lines for a given geometry. © 1990 IEEE

Duke Scholars

Published In

IEEE Transactions on Microwave Theory and Techniques

DOI

EISSN

1557-9670

ISSN

0018-9480

Publication Date

January 1, 1990

Volume

38

Issue

4

Start / End Page

396 / 404

Related Subject Headings

  • Networking & Telecommunications
  • 5103 Classical physics
  • 1005 Communications Technologies
  • 0906 Electrical and Electronic Engineering
 

Citation

APA
Chicago
ICMJE
MLA
NLM
Carin, L., & Webb, K. J. (1990). Isolation Effects in Single- and Dual-Plane VLSI Interconnects. IEEE Transactions on Microwave Theory and Techniques, 38(4), 396–404. https://doi.org/10.1109/22.52580
Carin, L., and K. J. Webb. “Isolation Effects in Single- and Dual-Plane VLSI Interconnects.” IEEE Transactions on Microwave Theory and Techniques 38, no. 4 (January 1, 1990): 396–404. https://doi.org/10.1109/22.52580.
Carin L, Webb KJ. Isolation Effects in Single- and Dual-Plane VLSI Interconnects. IEEE Transactions on Microwave Theory and Techniques. 1990 Jan 1;38(4):396–404.
Carin, L., and K. J. Webb. “Isolation Effects in Single- and Dual-Plane VLSI Interconnects.” IEEE Transactions on Microwave Theory and Techniques, vol. 38, no. 4, Jan. 1990, pp. 396–404. Scopus, doi:10.1109/22.52580.
Carin L, Webb KJ. Isolation Effects in Single- and Dual-Plane VLSI Interconnects. IEEE Transactions on Microwave Theory and Techniques. 1990 Jan 1;38(4):396–404.

Published In

IEEE Transactions on Microwave Theory and Techniques

DOI

EISSN

1557-9670

ISSN

0018-9480

Publication Date

January 1, 1990

Volume

38

Issue

4

Start / End Page

396 / 404

Related Subject Headings

  • Networking & Telecommunications
  • 5103 Classical physics
  • 1005 Communications Technologies
  • 0906 Electrical and Electronic Engineering