New properties and applications of electron-beam evaporated silicon in submicron elevated source/drain metal-oxide-semiconductor field-effect transistors

Journal Article (Journal Article)

We report the porous nature of electron-beam evaporated silicon on the sidewalls of metal-oxide-semiconductor field-effect transistor (MOSFET) gate spacers. This property was used to develop and fabricate submicron elevated source/drain MOSFETs with 200-500 Å ultrashallow junctions. Using electron-beam evaporated silicon reduces fabrication complexity, overcomes common problems inherent to elevated source/drain MOSFETs, and yields a self-aligned process.

Full Text

Duke Authors

Cited Authors

  • Mirabedini, MR; Goodwin-Johansson, SH; Massoud, HZ

Published Date

  • December 1, 1994

Published In

Volume / Issue

  • 65 / 6

Start / End Page

  • 728 - 730

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.113014

Citation Source

  • Scopus