Resolution of Silicon Wafer Temperature Measurement by in Situ Ellipsometry in a Rapid Thermal Processor

Journal Article (Journal Article)

The application of ellipsometry as a technique for in situ silicon wafer temperature measurement in a rapid thermal processing environment was investigated. This technique is based on the ellipsometric measurement of the refractive index of silicon, and then the determination of the temperature from the known temperature dependence of the refractive index. An algorithm was developed which enables the determination of the resolution limits of this technique. Within the temperature range from 0 to 1100°C, a worst–case temperature error of ± 10°C can be expected for an ellipsometer operating at a wavelength of 6328 Åand resolving 0.01° in the measured parameters Ψ and Δ, and in the angle of incidence ϕ For an ellipsometer operating at a wavelength of 4133 Å, the maximum error improves to within ± 1.4°C, for the temperature range investigated from 0 to 700°C. © 1993, by The Electrochemical Society, Inc. All rights reserved.

Full Text

Duke Authors

Cited Authors

  • Sampson, RK; Massoud, HZ

Published Date

  • January 1, 1993

Published In

Volume / Issue

  • 140 / 9

Start / End Page

  • 2673 - 2678

Electronic International Standard Serial Number (EISSN)

  • 1945-7111

International Standard Serial Number (ISSN)

  • 0013-4651

Digital Object Identifier (DOI)

  • 10.1149/1.2220884

Citation Source

  • Scopus