Thermal Oxidation of Silicon in Dry Oxygen: Growth-Rate Enhancement in the Thin Regime II. Physical Mechanisms
many studies of oxidation kinetics, it has been observed that silicon-dioxide growth in dry oxygen in the thin film regime (<500Å) is faster than predicted by the linear-parabolic description of the growth of thicker layers. Oxidation-rate enhancement in the thin film regime was studied in the 800°-1000°C range for a variety of substrate orientations, doping densities, and oxygen partial pressures using in situ ellipsometry. The results were reported in part I of this paper. In this part, the physical mechanisms previously proposed to explain the rate enhancement are discussed. No single model was found to apply under all experimental conditions. A new understanding of the growth-rate enhancement in the early stages of silicon oxidation in dry oxygen is introduced. © 1985, The Electrochemical Society, Inc. All rights reserved.
Duke Scholars
Altmetric Attention Stats
Dimensions Citation Stats
Published In
DOI
EISSN
ISSN
Publication Date
Volume
Issue
Start / End Page
Related Subject Headings
- Energy
- 4016 Materials engineering
- 3406 Physical chemistry
- 0912 Materials Engineering
- 0306 Physical Chemistry (incl. Structural)
- 0303 Macromolecular and Materials Chemistry
Citation
Published In
DOI
EISSN
ISSN
Publication Date
Volume
Issue
Start / End Page
Related Subject Headings
- Energy
- 4016 Materials engineering
- 3406 Physical chemistry
- 0912 Materials Engineering
- 0306 Physical Chemistry (incl. Structural)
- 0303 Macromolecular and Materials Chemistry