Thermal Oxidation of Silicon in Dry Oxygen: Growth-Rate Enhancement in the Thin Regime II. Physical Mechanisms

Journal Article (Journal Article)

many studies of oxidation kinetics, it has been observed that silicon-dioxide growth in dry oxygen in the thin film regime (<500Å) is faster than predicted by the linear-parabolic description of the growth of thicker layers. Oxidation-rate enhancement in the thin film regime was studied in the 800°-1000°C range for a variety of substrate orientations, doping densities, and oxygen partial pressures using in situ ellipsometry. The results were reported in part I of this paper. In this part, the physical mechanisms previously proposed to explain the rate enhancement are discussed. No single model was found to apply under all experimental conditions. A new understanding of the growth-rate enhancement in the early stages of silicon oxidation in dry oxygen is introduced. © 1985, The Electrochemical Society, Inc. All rights reserved.

Full Text

Duke Authors

Cited Authors

  • Massoud, HZ; Plummer, JD; Irene, EA

Published Date

  • January 1, 1985

Published In

Volume / Issue

  • 132 / 11

Start / End Page

  • 2693 - 2700

Electronic International Standard Serial Number (EISSN)

  • 1945-7111

International Standard Serial Number (ISSN)

  • 0013-4651

Digital Object Identifier (DOI)

  • 10.1149/1.2113649

Citation Source

  • Scopus