Modeling the trends in valence-band electron tunneling in NMOSFETs with ultrathin SiO2 and SiO2/Ta2O5 dielectrics with oxide scaling

Journal Article (Journal Article)

Gate oxide scaling in NMOSFETs causes electrons to tunnel from the conduction and valence bands of the silicon substrate in the direct-tunneling regime. In NMOSFETs, the tunneling of electrons from the substrate's valence band is a source of the substrate current IB and contributes to the gate current IG. Oxide thickness scaling leads to an increase in the substrate current IB and in the ratio IB/IG of substrate to gate current. In this paper, we report the trends in the IB/IG ratio due to oxide thickness scaling in ultrathin SiO2 and SiO2/Ta2O5 composite gate dielectrics.

Full Text

Duke Authors

Cited Authors

  • Shanware, A; Massoud, HZ; Vogel, E; Henson, K; Hauser, JR; Wortman, JJ

Published Date

  • January 1, 1999

Published In

Volume / Issue

  • 48 / 1

Start / End Page

  • 295 - 298

International Standard Serial Number (ISSN)

  • 0167-9317

Digital Object Identifier (DOI)

  • 10.1016/S0167-9317(99)00392-5

Citation Source

  • Scopus