Modeling the trends in valence-band electron tunneling in NMOSFETs with ultrathin SiO2 and SiO2 /Ta2 O5 dielectrics with oxide scaling
Publication
, Journal Article
Shanware, A; Massoud, HZ; Vogel, E; Henson, K; Hauser, JR; Wortman, JJ
Published in: Microelectronic Engineering
January 1, 1999
Gate oxide scaling in NMOSFETs causes electrons to tunnel from the conduction and valence bands of the silicon substrate in the direct-tunneling regime. In NMOSFETs, the tunneling of electrons from the substrate's valence band is a source of the substrate current IB and contributes to the gate current IG. Oxide thickness scaling leads to an increase in the substrate current IB and in the ratio IB/IG of substrate to gate current. In this paper, we report the trends in the IB/IG ratio due to oxide thickness scaling in ultrathin SiO2 and SiO2/Ta2O5 composite gate dielectrics.
Duke Scholars
Published In
Microelectronic Engineering
DOI
ISSN
0167-9317
Publication Date
January 1, 1999
Volume
48
Issue
1
Start / End Page
295 / 298
Related Subject Headings
- Applied Physics
- 4016 Materials engineering
- 4009 Electronics, sensors and digital hardware
- 0906 Electrical and Electronic Engineering
- 0299 Other Physical Sciences
- 0204 Condensed Matter Physics
Citation
APA
Chicago
ICMJE
MLA
NLM
Shanware, A., Massoud, H. Z., Vogel, E., Henson, K., Hauser, J. R., & Wortman, J. J. (1999). Modeling the trends in valence-band electron tunneling in NMOSFETs with ultrathin SiO2 and SiO2 /Ta2 O5 dielectrics with oxide scaling. Microelectronic Engineering, 48(1), 295–298. https://doi.org/10.1016/S0167-9317(99)00392-5
Shanware, A., H. Z. Massoud, E. Vogel, K. Henson, J. R. Hauser, and J. J. Wortman. “Modeling the trends in valence-band electron tunneling in NMOSFETs with ultrathin SiO2 and SiO2 /Ta2 O5 dielectrics with oxide scaling.” Microelectronic Engineering 48, no. 1 (January 1, 1999): 295–98. https://doi.org/10.1016/S0167-9317(99)00392-5.
Shanware A, Massoud HZ, Vogel E, Henson K, Hauser JR, Wortman JJ. Modeling the trends in valence-band electron tunneling in NMOSFETs with ultrathin SiO2 and SiO2 /Ta2 O5 dielectrics with oxide scaling. Microelectronic Engineering. 1999 Jan 1;48(1):295–8.
Shanware, A., et al. “Modeling the trends in valence-band electron tunneling in NMOSFETs with ultrathin SiO2 and SiO2 /Ta2 O5 dielectrics with oxide scaling.” Microelectronic Engineering, vol. 48, no. 1, Jan. 1999, pp. 295–98. Scopus, doi:10.1016/S0167-9317(99)00392-5.
Shanware A, Massoud HZ, Vogel E, Henson K, Hauser JR, Wortman JJ. Modeling the trends in valence-band electron tunneling in NMOSFETs with ultrathin SiO2 and SiO2 /Ta2 O5 dielectrics with oxide scaling. Microelectronic Engineering. 1999 Jan 1;48(1):295–298.
Published In
Microelectronic Engineering
DOI
ISSN
0167-9317
Publication Date
January 1, 1999
Volume
48
Issue
1
Start / End Page
295 / 298
Related Subject Headings
- Applied Physics
- 4016 Materials engineering
- 4009 Electronics, sensors and digital hardware
- 0906 Electrical and Electronic Engineering
- 0299 Other Physical Sciences
- 0204 Condensed Matter Physics