Characterization and modeling of the role of silicon self-interstitials (SiI) in stacking-fault growth. I.SiI injection by backside oxidation

Journal Article

Backside oxidation/frontside stacking-fault growth experiments were carried out to study the behavior of silicon self-interstitials injected during wet and dry oxidations of the backside of thinned samples. The concentration of self-interstitials at the capped surfaces was monitored by the growth or shrinkage of surface stacking faults. From the analysis of the experimental results, the relative recombination rates of self-interstitials at oxide and nitride boundary layers were obtained, with an oxide layer found to absorb self-interstitials at about three times the rate of a nitride layer. The results also suggest that the surface recombination coefficients are time-dependent rather than constant, as has been previously assumed.

Duke Authors

Cited Authors

  • Boyd Rogers, W; Massoud, HZ

Published Date

  • January 1, 1991

Published In

Volume / Issue

  • 91 / 4

Start / End Page

  • 474 - 494

International Standard Serial Number (ISSN)

  • 0161-6374

Citation Source

  • Scopus