An oxygen precipitation/surface stacking-fault growth experiment has been carried out to determine the kinetic coefficients of silicon self-interstitials. In this experiment, silicon self-interstitials were injected by the precipitation of interstitial oxygen within the bulk of the silicon samples. The sample front surfaces were capped with oxide or nitride layers, and the concentration of self-interstitials at the capped surfaces were monitored by the growth or shrinkage of surface stacking faults. Experimental results have been analyzed using steady-state and transient models, based on the assumption that self-interstitials dominate the kinetic processes of intrinsic point defects. From these analyses, estimates for the diffusivity D1, the equilibrium concentration CIeq, and the surface-reaction constant kIH(Si3N4), and kIS(SiO2) at nitride and oxide interfaces were obtained at 1125°C. © 1991, The Electrochemical Society, Inc. All rights reserved.