Thermal Oxidation of Silicon in Dry Oxygen Accurate Determination of the Kinetic Rate Constants

Journal Article (Journal Article)

Based upon the linear-parabolic growth model of silicon oxidation, accurate kinetic rate constants are determined for (100), (111), and (110) silicon oxidized in dry oxygen in the 800°-1000°C range. The oxide growth was monitored by high temperature automated in situ ellipsometry. It is shown that fitting the maximum number of oxidation data points to a linear-parabolic relationship yields accurate oxidation rate constants that are unique to the oxidation process as described in the Deal-Grove model, and not just good empirical fitting parameters. This approach is denoted the “optimum Xi technique.” Both linear and parabolic rate constants exhibit a break in their activation energies at 950°C. This behavior is discussed and interpreted in terms of the viscoelastic properties of SiO2. © 1985, The Electrochemical Society, Inc. All rights reserved.

Full Text

Duke Authors

Cited Authors

  • Massoud, HZ

Published Date

  • January 1, 1985

Published In

Volume / Issue

  • 132 / 7

Start / End Page

  • 1745 - 1753

Electronic International Standard Serial Number (EISSN)

  • 1945-7111

International Standard Serial Number (ISSN)

  • 0013-4651

Digital Object Identifier (DOI)

  • 10.1149/1.2114204

Citation Source

  • Scopus