Thermal Oxidation of Silicon in Dry Oxygen Accurate Determination of the Kinetic Rate Constants
Journal Article (Journal Article)
Based upon the linear-parabolic growth model of silicon oxidation, accurate kinetic rate constants are determined for (100), (111), and (110) silicon oxidized in dry oxygen in the 800°-1000°C range. The oxide growth was monitored by high temperature automated in situ ellipsometry. It is shown that fitting the maximum number of oxidation data points to a linear-parabolic relationship yields accurate oxidation rate constants that are unique to the oxidation process as described in the Deal-Grove model, and not just good empirical fitting parameters. This approach is denoted the “optimum Xi technique.” Both linear and parabolic rate constants exhibit a break in their activation energies at 950°C. This behavior is discussed and interpreted in terms of the viscoelastic properties of SiO2. © 1985, The Electrochemical Society, Inc. All rights reserved.
Full Text
Duke Authors
Cited Authors
- Massoud, HZ
Published Date
- January 1, 1985
Published In
Volume / Issue
- 132 / 7
Start / End Page
- 1745 - 1753
Electronic International Standard Serial Number (EISSN)
- 1945-7111
International Standard Serial Number (ISSN)
- 0013-4651
Digital Object Identifier (DOI)
- 10.1149/1.2114204
Citation Source
- Scopus