Submicrometre elevated source and drain MOSFET technology using E-beam evaporated silicon

Published

Journal Article

A self-aligned MOSFET structure with elevated source and drain was fabricated using electron beam evaporation of silicon. This technology allows the realisation of defect-free junctions as shallow as 200Å without preamorphisation, source/drain and gate regions doped in one implantation step and without a selective growth process, and source/drain regions with minimum areas and reduced junction capacitances.

Full Text

Duke Authors

Cited Authors

  • Mirabedini, MR; Goodwin-Johansson, SH; Massoud, HZ

Published Date

  • June 19, 1997

Published In

Volume / Issue

  • 33 / 13

Start / End Page

  • 1183 - 1184

International Standard Serial Number (ISSN)

  • 0013-5194

Digital Object Identifier (DOI)

  • 10.1049/el:19970776

Citation Source

  • Scopus