Submicrometre elevated source and drain MOSFET technology using E-beam evaporated silicon
A self-aligned MOSFET structure with elevated source and drain was fabricated using electron beam evaporation of silicon. This technology allows the realisation of defect-free junctions as shallow as 200Å without preamorphisation, source/drain and gate regions doped in one implantation step and without a selective growth process, and source/drain regions with minimum areas and reduced junction capacitances.
Mirabedini, MR; Goodwin-Johansson, SH; Massoud, HZ
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