Submicrometre elevated source and drain MOSFET technology using E-beam evaporated silicon
Journal Article (Journal Article)
A self-aligned MOSFET structure with elevated source and drain was fabricated using electron beam evaporation of silicon. This technology allows the realisation of defect-free junctions as shallow as 200Å without preamorphisation, source/drain and gate regions doped in one implantation step and without a selective growth process, and source/drain regions with minimum areas and reduced junction capacitances.
Full Text
Duke Authors
Cited Authors
- Mirabedini, MR; Goodwin-Johansson, SH; Massoud, HZ
Published Date
- June 19, 1997
Published In
Volume / Issue
- 33 / 13
Start / End Page
- 1183 - 1184
International Standard Serial Number (ISSN)
- 0013-5194
Digital Object Identifier (DOI)
- 10.1049/el:19970776
Citation Source
- Scopus