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Wavelength Considerations for Improved Silicon Wafer Temperature Measurement by Ellipsometry

Publication ,  Journal Article
Sampson, RK; Conrad, KA; Massoud, HZ; Irene, EA
Published in: Journal of the Electrochemical Society
January 1, 1994

The influence of the choice of wavelength on the resolution of silicon wafer temperature measurement by ellipsometry has been investigated. By changing the wavelength from 6328 to 4428 A, a 30% reduction was achieved in the rms difference between the temperature measured by ellipsometry and that measured by a thermocouple. Additional optical data are presented which provide insight into selecting the optimum wavelength for silicon wafer temperature measurement by ellipsometry. © 1994, The Electrochemical Society, Inc. All rights reserved.

Duke Scholars

Published In

Journal of the Electrochemical Society

DOI

EISSN

1945-7111

ISSN

0013-4651

Publication Date

January 1, 1994

Volume

141

Issue

2

Start / End Page

539 / 542

Related Subject Headings

  • Energy
  • 4016 Materials engineering
  • 3406 Physical chemistry
  • 0912 Materials Engineering
  • 0306 Physical Chemistry (incl. Structural)
  • 0303 Macromolecular and Materials Chemistry
 

Citation

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Sampson, R. K., Conrad, K. A., Massoud, H. Z., & Irene, E. A. (1994). Wavelength Considerations for Improved Silicon Wafer Temperature Measurement by Ellipsometry. Journal of the Electrochemical Society, 141(2), 539–542. https://doi.org/10.1149/1.2054762
Sampson, R. K., K. A. Conrad, H. Z. Massoud, and E. A. Irene. “Wavelength Considerations for Improved Silicon Wafer Temperature Measurement by Ellipsometry.” Journal of the Electrochemical Society 141, no. 2 (January 1, 1994): 539–42. https://doi.org/10.1149/1.2054762.
Sampson RK, Conrad KA, Massoud HZ, Irene EA. Wavelength Considerations for Improved Silicon Wafer Temperature Measurement by Ellipsometry. Journal of the Electrochemical Society. 1994 Jan 1;141(2):539–42.
Sampson, R. K., et al. “Wavelength Considerations for Improved Silicon Wafer Temperature Measurement by Ellipsometry.” Journal of the Electrochemical Society, vol. 141, no. 2, Jan. 1994, pp. 539–42. Scopus, doi:10.1149/1.2054762.
Sampson RK, Conrad KA, Massoud HZ, Irene EA. Wavelength Considerations for Improved Silicon Wafer Temperature Measurement by Ellipsometry. Journal of the Electrochemical Society. 1994 Jan 1;141(2):539–542.

Published In

Journal of the Electrochemical Society

DOI

EISSN

1945-7111

ISSN

0013-4651

Publication Date

January 1, 1994

Volume

141

Issue

2

Start / End Page

539 / 542

Related Subject Headings

  • Energy
  • 4016 Materials engineering
  • 3406 Physical chemistry
  • 0912 Materials Engineering
  • 0306 Physical Chemistry (incl. Structural)
  • 0303 Macromolecular and Materials Chemistry