Causes and prevention of temperature-dependent bubbles in silicon wafer bonding

Journal Article (Journal Article)

Unbonded areas or bubbles generated at the interface of bonded silicon wafers in the temperature range of 200-800°C have been investigated. Experiments described in this paper demonstrate that the desorption of hydrocarbon contamina­tion at the silicon wafer surfaces appears to be a necessary condition for the formation of these bubbles. SIMS data also indicate the existence of hydrocarbons at the bonding interface. It is speculated that hydrocarbon gas such as CH4 is re­quired for bubble nucleation and that either CH4 or H2 itself or a mixture of both gases is contained in these bubbles. Finally, methods to prevent the formation of these bubbles are presented. © 1991 The Japan Society of Applied Physics.

Full Text

Duke Authors

Cited Authors

  • Mitani, K; Lehmann, V; Stengl, R; Feijoo, D; Gosele, UM; Massoud, HZ

Published Date

  • January 1, 1991

Published In

Volume / Issue

  • 30 / 4

Start / End Page

  • 615 - 622

Electronic International Standard Serial Number (EISSN)

  • 1347-4065

International Standard Serial Number (ISSN)

  • 0021-4922

Digital Object Identifier (DOI)

  • 10.1143/JJAP.30.615

Citation Source

  • Scopus