C-V measurement and simulation of silicon-insulator-silicon (SIS) structures for analyzing charges in buried oxides of bonded SOI materials

Journal Article (Academic article)

Charges in buried oxide layers formed by wafer bonding were evaluated by capacitance-voltage (C-V) measurements. In this study, silicon-insulator-silicon (SIS) and metal-oxide-silicon (MOS) capacitors were fabricated on bonded wafers. For analyzing C-V curves of SIS structures, C-V simulation programs were developed. From the analysis, the authors concludes that approximately 2×1011/cm2 negative charges were distributed uniformly in the oxide. The effect of the experimental conditions during wafer bonding on generated charges in buried oxides is also discussed

Duke Authors

Cited Authors

  • Mitani, K; Massoud, HZ

Published Date

  • 1992

Published In

  • Ieice Trans. Electron. (Japan)

Volume / Issue

  • E75-C / 12

Start / End Page

  • 1421 - 1429