Effects of Ge content in poly-Si1-xGex gate material on the tunneling barrier in PMOS devices

Journal Article (Journal Article)

The use of SiGe gates in MOSFET technology has promise as a single-gate material for both n- and p-channel MOSFETs. The Ge content in the gate, however, affects the gate energy band diagram. While Ge in the SiGe gate does not affect the conduction-band energy level, it is found to raise the valence-band energy level and reduce the gate bandgap. This change results in an increase in the gate current resulting mainly from the tunneling of electrons from the valence band of the gate in PMOSFETs. This paper reports on the effects of Ge content in SiGe gates on the tunneling characteristics of PMOSFETs.

Full Text

Duke Authors

Cited Authors

  • Shanware, A; Massoud, HZ; Acker, A; Li, VZQ; Mirabedini, MR; Henson, K; Hauser, JR; Wortman, JJ

Published Date

  • January 1, 1999

Published In

Volume / Issue

  • 48 / 1

Start / End Page

  • 39 - 42

International Standard Serial Number (ISSN)

  • 0167-9317

Digital Object Identifier (DOI)

  • 10.1016/S0167-9317(99)00333-0

Citation Source

  • Scopus