Effects of Ge content in poly-Si1-x Gex gate material on the tunneling barrier in PMOS devices
Publication
, Journal Article
Shanware, A; Massoud, HZ; Acker, A; Li, VZQ; Mirabedini, MR; Henson, K; Hauser, JR; Wortman, JJ
Published in: Microelectronic Engineering
January 1, 1999
The use of SiGe gates in MOSFET technology has promise as a single-gate material for both n- and p-channel MOSFETs. The Ge content in the gate, however, affects the gate energy band diagram. While Ge in the SiGe gate does not affect the conduction-band energy level, it is found to raise the valence-band energy level and reduce the gate bandgap. This change results in an increase in the gate current resulting mainly from the tunneling of electrons from the valence band of the gate in PMOSFETs. This paper reports on the effects of Ge content in SiGe gates on the tunneling characteristics of PMOSFETs.
Duke Scholars
Published In
Microelectronic Engineering
DOI
ISSN
0167-9317
Publication Date
January 1, 1999
Volume
48
Issue
1
Start / End Page
39 / 42
Related Subject Headings
- Applied Physics
- 4016 Materials engineering
- 4009 Electronics, sensors and digital hardware
- 0906 Electrical and Electronic Engineering
- 0299 Other Physical Sciences
- 0204 Condensed Matter Physics
Citation
APA
Chicago
ICMJE
MLA
NLM
Shanware, A., Massoud, H. Z., Acker, A., Li, V. Z. Q., Mirabedini, M. R., Henson, K., … Wortman, J. J. (1999). Effects of Ge content in poly-Si1-x Gex gate material on the tunneling barrier in PMOS devices. Microelectronic Engineering, 48(1), 39–42. https://doi.org/10.1016/S0167-9317(99)00333-0
Shanware, A., H. Z. Massoud, A. Acker, V. Z. Q. Li, M. R. Mirabedini, K. Henson, J. R. Hauser, and J. J. Wortman. “Effects of Ge content in poly-Si1-x Gex gate material on the tunneling barrier in PMOS devices.” Microelectronic Engineering 48, no. 1 (January 1, 1999): 39–42. https://doi.org/10.1016/S0167-9317(99)00333-0.
Shanware A, Massoud HZ, Acker A, Li VZQ, Mirabedini MR, Henson K, et al. Effects of Ge content in poly-Si1-x Gex gate material on the tunneling barrier in PMOS devices. Microelectronic Engineering. 1999 Jan 1;48(1):39–42.
Shanware, A., et al. “Effects of Ge content in poly-Si1-x Gex gate material on the tunneling barrier in PMOS devices.” Microelectronic Engineering, vol. 48, no. 1, Jan. 1999, pp. 39–42. Scopus, doi:10.1016/S0167-9317(99)00333-0.
Shanware A, Massoud HZ, Acker A, Li VZQ, Mirabedini MR, Henson K, Hauser JR, Wortman JJ. Effects of Ge content in poly-Si1-x Gex gate material on the tunneling barrier in PMOS devices. Microelectronic Engineering. 1999 Jan 1;48(1):39–42.
Published In
Microelectronic Engineering
DOI
ISSN
0167-9317
Publication Date
January 1, 1999
Volume
48
Issue
1
Start / End Page
39 / 42
Related Subject Headings
- Applied Physics
- 4016 Materials engineering
- 4009 Electronics, sensors and digital hardware
- 0906 Electrical and Electronic Engineering
- 0299 Other Physical Sciences
- 0204 Condensed Matter Physics