Reduction of p-ZnSe/p-GaAs non-ohmic barrier by inserting a GaN buffer layer

Published

Journal Article

Full Text

Cited Authors

  • Hishida, Y; Yoshie, T; Yagi, K; Yamaguchi, T; Niina, T

Published Date

  • May 1995

Published In

Volume / Issue

  • 150 /

Start / End Page

  • 828 - 832

Published By

International Standard Serial Number (ISSN)

  • 0022-0248

Digital Object Identifier (DOI)

  • 10.1016/0022-0248(95)80055-h

Language

  • en