The heterogeneous integration of GaN thin-film metal-semiconductor-metal photodetectors onto silicon

Journal Article

The heterogeneous integration of GaN thin-film metal-semiconductor-metal (MSM) photodetectors onto a host substrate of SiO2-Si is reported herein. Thin-film GaN photodetectors were separated from the lithium gallate (LiGaO2) growth substrate using selective etching, and contact bonded onto an SiO2-Si host substrate. The thin-film MSMs exhibited a dark current of 13.36 pA and an UV photoresponse at 308 nm of 0.11 A/W at a reverse bias voltage of 20 V. This first demonstration of GaN thin-film device integration onto SiO2-Si using a low-temperature integration process, combined with the advances in GaN material quality on LiGaO2 substrates, enables the integration of GaN devices with Si circuitry for heterogeneously integrated systems.

Full Text

Duke Authors

Cited Authors

  • Seo, S; Lee, KK; Kang, S; Huang, S; Doolittle, WA; Jokerst, NM; Brown, AS; Brooke, MA

Published Date

  • 2002

Published In

Volume / Issue

  • 14 / 2

Start / End Page

  • 185 - 187

International Standard Serial Number (ISSN)

  • 1041-1135

Digital Object Identifier (DOI)

  • 10.1109/68.980507