Nonlinear optical absorption in semiconductor epitaxial depletion regions

Journal Article

We have observed an optically induced decrease in absorption near the band-gap energy in a single-heterostructure Schottky barrier depletion region. Photogenerated carriers created and trapped in the unbiased depletion region cause a dynamic decrease in the absorption. This depletion region electric-field absorption modulator (DREAM) exhibits nonlinear optical absorption which relies upon carrier transport induced by an electric field without an external circuit applied to the device. We demonstrate a factor of two change in absorption at peak powers of 2 mW (0.2 W/cm2).

Full Text

Duke Authors

Cited Authors

  • Jokerst, NM; Garmire, E

Published Date

  • 1988

Published In

Volume / Issue

  • 53 / 10

Start / End Page

  • 897 - 899

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.100108