RTD/CMOS Nanoelectronic Circuits: Thin-Film InP-Based Resonant Tunneling Diodes Integrated with CMOS Circuits

Journal Article

The combination of resonant tunneling diodes (RTD's) and complementary metal-oxide-semiconductor (CMOS) silicon circuitry can offer substantial improvement in speed, power dissipation, and circuit complexity over CMOS-only circuits. We demonstrate the first integrated resonant tunneling CMOS circuit, a clocked 1-bit comparator with a device count of six, compared with 21 in a comparable all-CMOS design. A hybrid integration process is developed for InP-based RTD's which are transferred and bonded to CMOS chips. The prototype comparator shows sensitivity in excess of 106 V/A, and achieves error-free performance in functionality testing. An optimized integration process, under development, can yield high-speed, low power circuits by lowering the high parasitic capacitance associated with the prototype circuit.

Full Text

Duke Authors

Cited Authors

  • Bergman, JI; Chang, J; Joo, Y; Matinpour, B; Laskar, J; Jokerst, NM; Brooke, MA; Brar, B; III, EB

Published Date

  • 1999

Published In

Volume / Issue

  • 20 / 3

Start / End Page

  • 119 - 122

International Standard Serial Number (ISSN)

  • 0741-3106

Digital Object Identifier (DOI)

  • 10.1109/55.748907