Concentration-dependent near and above band edge absorption in doped InP and its effect on solar cell modeling

Journal Article

Absorption coefficients in the energy range of 1.8-3.0 eV were obtained using extremely thin InP samples that were fabricated and bonded to glass substrates, whereas samples with thickness in the range of 0.5-0.9 μm were found to be optimum for measurements in the lower energy range of 1.3-1.6 eV. A large doping dependence of absorption coefficients was observed for energies below 1.6 eV. Model calculations showed that the use of accurate doping dependent absorption coefficients can result in significant improvement in the predicted internal quantum efficiency and device performance.

Full Text

Duke Authors

Cited Authors

  • Augustine, G; Rohatgi, A; Jokerst, NM; Dhere, R

Published Date

  • 1995

Published In

  • Journal of Applied Physics

Volume / Issue

  • 78 / 4

Start / End Page

  • 2666 - 2670

Digital Object Identifier (DOI)

  • 10.1063/1.360128