Thin film pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes integrated onto Si substrates
We report high peak-to-valley current ratio (PVR) resonant tunneling diodes (RTD's) bonded to silicon. Pseudomorphic AlAs/In0.53 Ga0.47As/InAs resonant tunneling diode structures grown on semi-insulating InP with peak-to-valley current ratios as high as 30 at 300 K have been separated from the growth substrate and bonded to silicon substrates coated with Si3N4, forming thin film devices. In addition, thin film multiple stack RTD structures have been bonded to silicon substrates. The I-V characteristics of both the single and multi-stacked thin film RTD's exhibit no signs of dergradation after bonding to the host substrate. These results are the first successful demonstration of Inp bases electronics bonded to a silicon host substrate and enable the integration of RTD'S with conventional silicon circuitry.
Evers, N; Vendier, O; Chun, C; Murti, MR; Laskar, J; Jokerst, NM; Moise, TS; Kao, YC
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