Vertical Electrical Interconnection of Compound Semiconductor Thin-Film Devices to Underlying Silicon Circuitry

Published

Journal Article

A three-dimensional integration technology that electrically connects an independently optimized thin-film device layer to a Si circuitry layer is reported in this paper. An epitaxial liftoff GaAs thin-film optical detector is integrated directly on top of Si amplifier circuitry with a planarizing, insulating layer of polyimide between the detector and the circuitry. The detector is vertically connected to the circuitry below through an electrical via in the insulator. This integration technology enables monolithic, massively parallel vertical interconnection between two independently optimized device layers. Systems such as image processing arrays will significantly bene- fit from this massively parallel integration technology. © 1992 IEEE

Full Text

Duke Authors

Cited Authors

  • Camperi-Ginestet, C; Kim, YW; Jokerst, NM; Allen, MG; Brooke, MA

Published Date

  • January 1, 1992

Published In

Volume / Issue

  • 4 / 9

Start / End Page

  • 1003 - 1006

Electronic International Standard Serial Number (EISSN)

  • 1941-0174

International Standard Serial Number (ISSN)

  • 1041-1135

Digital Object Identifier (DOI)

  • 10.1109/68.157129

Citation Source

  • Scopus