Vertical electrical interconnection of compound semiconductor thin-film devices to underlying silicon circuitry

Journal Article

A three-dimensional integration technology that electrically connects an independently optimized thin-film device layer to a Si circuitry layer is reported. An epitaxial liftoff GaAs thin-film optical detector is integrated directly on top of Si amplifier circuitry with a planarizing, insulating layer of polyimide between the detector and the circuitry. The detector is virtually connected to the circuitry below through an electrical via in the insulator. This integration technology enables monolithic, massively parallel vertical interconnection between two independently optimized device layers. Systems such as image processing arrays should significantly benefit from this massively parallel integration technology.

Full Text

Duke Authors

Cited Authors

  • Camperi-Ginestet, C; Kim, YW; Jokerst, NM; Allen, MG; Brooke, MA

Published Date

  • 1992

Published In

  • IEEE Photonics Technology Letters

Volume / Issue

  • 4 / 9

Start / End Page

  • 1003 - 1006

Digital Object Identifier (DOI)

  • 10.1109/68.157129