Direct measurement of near-band-gap electrorefraction in Al 0.3 Ga0.7 As/GaAs/Al0.3 Ga0.7 As thin-film structures

Journal Article

We report the first direct measurement of near-band-gap Franz-Keldysh electrorefraction in Al0.3Ga0.7As/GaAs/Al 0.3Ga0.7As p-i-n single-crystal thin-film Fabry-Perot structures with semitransparent metallic mirror contacts. These measurements are performed for various reverse biases and at photon energies ranging from 9 to less than 1 meV from the GaAs band edge. The measured refractive index variation is several times larger than that predicted by the effective mass approximation theory.

Full Text

Duke Authors

Cited Authors

  • Calhoun, KH; Jokerst, NM

Published Date

  • 1993

Published In

Volume / Issue

  • 62 / 21

Start / End Page

  • 2673 - 2675

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.109281