High-speed large-area inverted InGaAs thin-film metal-semiconductor-metal photodetectors
Journal Article (Journal Article)
Inverted metal-semiconductor-metal (I-MSM) photodetectors, which are thin-film MSMs with the growth substrate removed and fingers on the bottom of the device (to eliminate finger shadowing to enhance responsivity), are reported herein for high-speed high-efficiency large-area photodetectors. Reported herein are the highest speed vertically addressed large-area (40-μm diameter) photodetectors reported to date, which operate with a responsivity of 0.16 A/W and a full-width half-maximum of less than 5 ps. Materials, fabrication processes, heterogeneous integration, and characterization of I-MSM photodetectors are presented in this paper, as measured using a fiber-based electrooptic sampling system. These large-area photodetectors are ideal for vertically addressed high-speed optical links which need alignment-tolerant packaging for cost sensitive applications.
Full Text
Duke Authors
Cited Authors
- Seo, SW; Jokerst, NM; Cho, SY; Brown, AS; Huang, S; Shin, JJ; Brooke, MA
Published Date
- July 1, 2004
Published In
Volume / Issue
- 10 / 4
Start / End Page
- 686 - 693
International Standard Serial Number (ISSN)
- 1077-260X
Digital Object Identifier (DOI)
- 10.1109/JSTQE.2004.831677
Citation Source
- Scopus