High-speed large-area inverted InGaAs thin-film metal-semiconductor-metal photodetectors

Journal Article

Inverted metal-semiconductor-metal (I-MSM) photodetectors, which are thin-film MSMs with the growth substrate removed and fingers on the bottom of the device (to eliminate finger shadowing to enhance responsivity), are reported herein for high-speed high-efficiency large-area photodetectors. Reported herein are the highest speed vertically addressed large-area (40-μm diameter) photodetectors reported to date, which operate with a responsivity of 0.16 A/W and a full-width half-maximum of less than 5 ps. Materials, fabrication processes, heterogeneous integration, and characterization of I-MSM photodetectors are presented in this paper, as measured using a fiber-based electrooptic sampling system. These large-area photodetectors are ideal for vertically addressed high-speed optical links which need alignment-tolerant packaging for cost sensitive applications.

Full Text

Duke Authors

Cited Authors

  • Seo, S-W; Jokerst, NM; Cho, S-Y; Brown, AS; Huang, S; Shin, JJ; Brooke, MA

Published Date

  • 2004

Published In

  • IEEE Journal on Selected Topics in Quantum Electronics

Volume / Issue

  • 10 / 4

Start / End Page

  • 686 - 693

Digital Object Identifier (DOI)

  • 10.1109/JSTQE.2004.831677