Thin-Film integration for nanoscale and high frequency electronics on si

Journal Article

The continued emergence of wireless applications as perhaps the most financially significant market in recent years, wireless technology has become a global core competency. The demand for increasingly higher rates of data transmission, low-power operation and high frequency operation will eventually require integration of nanoscale electronics into available Silicon technologies. A broad application base is expected for cointegrated resonant tunneling /CMOS technology (termed QMOS for quantum metal oxide semiconductor) because of the expected factor of 5 to 10 increase in functional density and speed when compared to conventional all-CMOS high speed circuit approaches. These circuits will be realized by integrating compound semiconductor resonant tunneling diodes and three terminal high frequency components with conventional CMOS circuitry through the use of thin-film integration processes. The focus of this work is to develop reliable, densely packed nanoelectronic interfaces to bring higher functionality to Si systems. We combine: (1) high performance, resonant tunneling electronics; (2) high frequency, wireless electronics; and (3) conventional CMOS electronics into a single wafer level integrated system.

Full Text

Duke Authors

Cited Authors

  • Laskar, J; Jokerst, N; Evers, N; Chun, C

Published Date

  • December 1, 1997

Published In

Volume / Issue

  • 3212 /

Start / End Page

  • 97 - 105

International Standard Serial Number (ISSN)

  • 0277-786X

Digital Object Identifier (DOI)

  • 10.1117/12.284581

Citation Source

  • Scopus