Vertical optical communication through stacked silicon wafers using hybrid monolithic thin film InGaAsP emitters and detectors

Journal Article

Optical communication through stacked silicon wafers has been demonstrated for the first time using hybrid monolithic thin film InP/InGaAsP light emitting diodes and double heterostructure p̄-i-n photodetectors operating at λ = 1.3 μm. A modified epitaxial liftoff technique was employed to align and deposit an emitter on a nitride coated, polished silicon wafer and to similarly deposit a detector on an identical silicon wafer. These wafers were then stacked with the emitter and detector aligned to demonstrate optical communication through stacked silicon wafers. This inexpensive and manufacturable three-dimensional optical interconnection scheme is a promising technology for implementation of massively parallel signal processing systems.

Full Text

Duke Authors

Cited Authors

  • Calhoun, KH; Camperi-Ginestet, CB; Jokerst, NM

Published Date

  • 1993

Published In

  • IEEE Photonics Technology Letters

Volume / Issue

  • 5 / 2

Start / End Page

  • 254 - 257

Digital Object Identifier (DOI)

  • 10.1109/68.196022