Selective wet etchinq of lithium gallate

Journal Article

Lithium gallate (LGO) is an attractive, near lattice matched substrate for the growth of GaN. In addition, LGO substrates provide a convenient route to forming thin films of GaN as used in substrate removal or lift-off processes. We report the wet etching of LGO substrates for the production of GaN thin films. Two face-selective LGO etches have been used for the processing of substrates. The etch rate of the cation face is reported here for the first time and is 0.25 μm min -1 at 50°C. The etching solution is safe and benign to most materials including metallic bonding.

Duke Authors

Cited Authors

  • Kropewnicki, TJ; Doolittle, WA; Carter-Coman, C; Kang, S; Kohl, PA; Jokerst, NM; Brown, AS

Published Date

  • January 1, 1998

Published In

Volume / Issue

  • 145 / 5

Start / End Page

  • L88 - L90

International Standard Serial Number (ISSN)

  • 0013-4651