Selective wet etchinq of lithium gallate
Lithium gallate (LGO) is an attractive, near lattice matched substrate for the growth of GaN. In addition, LGO substrates provide a convenient route to forming thin films of GaN as used in substrate removal or lift-off processes. We report the wet etching of LGO substrates for the production of GaN thin films. Two face-selective LGO etches have been used for the processing of substrates. The etch rate of the cation face is reported here for the first time and is 0.25 μm min-1 at 50°C. The etching solution is safe and benign to most materials including metallic bonding.
Kropewnicki, TJ; Doolittle, WA; Carter-Coman, C; Kang, S; Kohl, PA; Jokerst, NM; Brown, AS
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