Analysis of In0.07Ga0.93As layers on GaAs compliant substrates by double crystal x-ray diffraction

Journal Article (Journal Article)

Double crystal x-ray diffraction data is presented from the most extensive compliant substrate experiment to date. Five consecutive InGaAs-GaAs growths were performed simultaneously on GaAs-based thin film compliant substrates and thick reference substrates. The In0.07Ga0.93As layers were grown to thicknesses below and above the conventional critical thickness. It was found that InGaAs films grown on the compliant substrates have a larger critical thickness and slower strain relief than InGaAs grown on conventional GaAs substrates. © 1997 American Institute of Physics.

Full Text

Duke Authors

Cited Authors

  • Carter-Coman, C; Bicknell-Tassius, R; Brown, AS; Jokerst, NM

Published Date

  • March 31, 1997

Published In

Volume / Issue

  • 70 / 13

Start / End Page

  • 1754 - 1756

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.118647

Citation Source

  • Scopus