Analysis of GaAs substrate removal etching with citric acid:H2O2 and NH4OH:H2O2 for application to compliant substrates
New properties associated with selective substrate removal have been observed in the application of this technique to GaAs thin film compliant substrates. Citric acid- and NH4OH-based etches are used to selectively etch the GaAs substrate and stop on an AlAs layer. The AlAs stop-etch layer is transformed into a layer that is almost twice as thick as the original layer, mismatched to the remaining GaAs epilayer, and has a refractive index around 2.0. Replacement of the single AlAs stop etch layer with multiple thin AlGaAs stop etch layers is proposed to alleviate this problem.
Carter-Coman, C; Bicknell-Tassius, R; Benz, RG; Brown, AS; Jokerst, NM
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