Analysis of GaAs substrate removal etching with citric acid:H2O2 and NH4OH:H2O2 for application to compliant substrates

Journal Article (Journal Article)

New properties associated with selective substrate removal have been observed in the application of this technique to GaAs thin film compliant substrates. Citric acid- and NH4OH-based etches are used to selectively etch the GaAs substrate and stop on an AlAs layer. The AlAs stop-etch layer is transformed into a layer that is almost twice as thick as the original layer, mismatched to the remaining GaAs epilayer, and has a refractive index around 2.0. Replacement of the single AlAs stop etch layer with multiple thin AlGaAs stop etch layers is proposed to alleviate this problem.

Full Text

Duke Authors

Cited Authors

  • Carter-Coman, C; Bicknell-Tassius, R; Benz, RG; Brown, AS; Jokerst, NM

Published Date

  • January 1, 1997

Published In

Volume / Issue

  • 144 / 2

International Standard Serial Number (ISSN)

  • 0013-4651

Digital Object Identifier (DOI)

  • 10.1149/1.1837422

Citation Source

  • Scopus