Resonant-cavity-enhanced thin-film AlGaAs/GaAs/AlGaAs LED's with metal mirrors.
Journal Article (Journal Article)
Resonant-cavity-enhanced light-emitting diodes (RCE LED's) are of increasing interest as a low-cost alternative to lasers for short-distance applications. We report on the characteristics of thin-film AlGaAs/GaAs/AlGaAs double-heterostructure RCE LED's with metal mirrors on both sides fabricated by means of epitaxial liftoff and bonded to silicon host substrates. The devices exhibit typical turn-on voltages of 1.3 V, operating resistances of 31 Ω, linewidths of 10.4 nm, efficiencies of 1.4%, dispersion half-angles of 23.7°, and stable output over more than 1700 h. These devices exhibit significant improvement over conventional LED's without additional complicated processing or growth steps, resulting in a manufacturable, low-cost device.
Full Text
Duke Authors
Cited Authors
- Wilkinson, ST; Jokerst, NM; Leavitt, RP
Published Date
- December 1995
Published In
Volume / Issue
- 34 / 36
Start / End Page
- 8298 - 8302
PubMed ID
- 21068949
Electronic International Standard Serial Number (EISSN)
- 1539-4522
International Standard Serial Number (ISSN)
- 1559-128X
Digital Object Identifier (DOI)
- 10.1364/ao.34.008298
Language
- eng