Three-layer 3-D silicon system using through-Si vertical optical interconnections and Si CMOS hybrid building blocks
Journal Article (Journal Article)
We present for the first time a three-dimensional (3-D) Si CMOS interconnection system consisting of three layers of optically interconnected hybrid integrated Si CMOS transceivers. The transceivers were fabricated using 0.8-μm digital Si CMOS foundry circuits and were integrated with long wavelength InP-based emitters and detectors for through-Si vertical optical interconnections. The optical transmitter operated with a digital input and optical output with operation speeds up to 155 Mb/s. The optical receiver operated with an external optical input and a digital output up to 155 Mb/s. The transceivers were stacked to form 3-D through-Si vertical optical interconnections and a fabricated three-layer stack demonstrated optical interconnections between the three layers with operational speed of 1 Mb/s and bit-error rate of 10-9.
Full Text
Duke Authors
Cited Authors
- Bond, SW; Vendier, O; Lee, M; Jung, S; Vrazel, M; Lopez-Lagunas, A; Chai, S; Dagnall, G; Brooke, M; Jokerst, NM; Wills, DS; Brown, A
Published Date
- March 1, 1999
Published In
Volume / Issue
- 5 / 2
Start / End Page
- 276 - 286
International Standard Serial Number (ISSN)
- 1077-260X
Digital Object Identifier (DOI)
- 10.1109/2944.778306
Citation Source
- Scopus