Three-layer 3-D silicon system using through-Si vertical optical interconnections and Si CMOS hybrid building blocks

Journal Article

We present for the first time a three-dimensional (3-D) Si CMOS interconnection system consisting of three layers of optically interconnected hybrid integrated Si CMOS transceivers. The transceivers were fabricated using 0.8-μm digital Si CMOS foundry circuits and were integrated with long wavelength InP-based emitters and detectors for through-Si vertical optical interconnections. The optical transmitter operated with a digital input and optical output with operation speeds up to 155 Mb/s. The optical receiver operated with an external optical input and a digital output up to 155 Mb/s. The transceivers were stacked to form 3-D through-Si vertical optical interconnections and a fabricated three-layer stack demonstrated optical interconnections between the three layers with operational speed of 1 Mb/s and bit-error rate of 10-9.

Full Text

Duke Authors

Cited Authors

  • Bond, SW; Vendier, O; Lee, M; Jung, S; Vrazel, M; Lopez-Lagunas, A; Chai, S; Dagnall, G; Brooke, M; Jokerst, NM; Wills, DS; Brown, A

Published Date

  • 1999

Published In

  • IEEE Journal on Selected Topics in Quantum Electronics

Volume / Issue

  • 5 / 2

Start / End Page

  • 276 - 286

Digital Object Identifier (DOI)

  • 10.1109/2944.778306