Thin-film inverted MSM photodetectors
Journal Article (Journal Article)
To improve the external quantum efficiency and maintain the high speed of metal-semiconductor-metal (MSM) photodetectors, a thin film inverted MSM (I-MSM), which is separated from the growth substrate, has fingers on the bottom of the device, and is bonded to a silicon host substrate, is reported for the first time. This device optimizes the tradeoff between speed and responsivity, demonstrating the improvement in responsivity that can be achieved using an I-MSM. The photodetector time domain response at λ = 1.3 μm is 50 ps FWHM, with a 34 ps rise time and a 85 ps fall time.
Full Text
Duke Authors
Cited Authors
- Vendier, O; Jokerst, NM; Leavitt, RP
Published Date
- February 1, 1996
Published In
Volume / Issue
- 8 / 2
Start / End Page
- 266 - 268
International Standard Serial Number (ISSN)
- 1041-1135
Digital Object Identifier (DOI)
- 10.1109/68.484262
Citation Source
- Scopus