Thin-film inverted MSM photodetectors

Journal Article

To improve the external quantum efficiency and maintain the high speed of metal-semiconductor-metal (MSM) photodetectors, a thin film inverted MSM (I-MSM), which is separated from the growth substrate, has fingers on the bottom of the device, and is bonded to a silicon host substrate, is reported for the first time. This device optimizes the tradeoff between speed and responsivity, demonstrating the improvement in responsivity that can be achieved using an I-MSM. The photodetector time domain response at λ = 1.3 μm is 50 ps FWHM, with a 34 ps rise time and a 85 ps fall time.

Full Text

Duke Authors

Cited Authors

  • Vendier, O; Jokerst, NM; Leavitt, RP

Published Date

  • 1996

Published In

Volume / Issue

  • 8 / 2

Start / End Page

  • 266 - 268

International Standard Serial Number (ISSN)

  • 1041-1135

Digital Object Identifier (DOI)

  • 10.1109/68.484262