Large area, high speed InGaAs thin film MSMs for heterogeneously integrated optoelectronics
Journal Article
Thin film InGaAs photodetectors for heterogeneously integrated optoelectronics are demonstrated with low dark current (0.16nA at 5V), and high speed (3ps rise time, 6.3ps FWHM), large area (40 μm), and good responsivity (0.19A/W at 5V).
Duke Authors
Cited Authors
- Seo, SW; Shen, JJ; Jokerst, NM; Brown, AS
Published Date
- January 1, 2003
Published In
Volume / Issue
- 88 /
Start / End Page
- 460 - 463
International Standard Serial Number (ISSN)
- 1094-5695
Citation Source
- Scopus