Large area, high speed InGaAs thin film MSMs for heterogeneously integrated optoelectronics

Journal Article

Thin film InGaAs photodetectors for heterogeneously integrated optoelectronics are demonstrated with low dark current (0.16nA at 5V), and high speed (3ps rise time, 6.3ps FWHM), large area (40 μm), and good responsivity (0.19A/W at 5V).

Duke Authors

Cited Authors

  • Seo, SW; Shen, JJ; Jokerst, NM; Brown, AS

Published Date

  • January 1, 2003

Published In

Volume / Issue

  • 88 /

Start / End Page

  • 460 - 463

International Standard Serial Number (ISSN)

  • 1094-5695

Citation Source

  • Scopus