A new mechanism for spontaneous nanostructure formation on bottom-patterned compliant substrates
Journal Article (Journal Article)
Bottom-patterned compliant substrates can be used to laterally modulate the properties of a mismatched epilayer. At temperatures where strain-dependent growth kinetics are significant, the GaAs bottom pattern compliant substrates affected the growth of strained InGaAs epilayers by causing lateral modulation in material height. Spatially aligned mounds and quantum dots were observed on the samples grown at high temperatures. A new mounding mechanism was observed on InGaAs layers grown on the compliant substrates. Strain-dependent growth kinetics and the bottom patterned compliant substrate are used to explain these effects. © 1997 American Institute of Physics.
Full Text
Duke Authors
Cited Authors
- Carter-Coman, C; Brown, AS; Metzger, RA; Jokerst, NM; Pickering, J; Bottomley, LA
Published Date
- November 10, 1997
Published In
Volume / Issue
- 71 / 19
Start / End Page
- 2773 - 2775
International Standard Serial Number (ISSN)
- 0003-6951
Digital Object Identifier (DOI)
- 10.1063/1.120129
Citation Source
- Scopus