A new mechanism for spontaneous nanostructure formation on bottom-patterned compliant substrates

Journal Article (Journal Article)

Bottom-patterned compliant substrates can be used to laterally modulate the properties of a mismatched epilayer. At temperatures where strain-dependent growth kinetics are significant, the GaAs bottom pattern compliant substrates affected the growth of strained InGaAs epilayers by causing lateral modulation in material height. Spatially aligned mounds and quantum dots were observed on the samples grown at high temperatures. A new mounding mechanism was observed on InGaAs layers grown on the compliant substrates. Strain-dependent growth kinetics and the bottom patterned compliant substrate are used to explain these effects. © 1997 American Institute of Physics.

Full Text

Duke Authors

Cited Authors

  • Carter-Coman, C; Brown, AS; Metzger, RA; Jokerst, NM; Pickering, J; Bottomley, LA

Published Date

  • November 10, 1997

Published In

Volume / Issue

  • 71 / 19

Start / End Page

  • 2773 - 2775

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.120129

Citation Source

  • Scopus