Communication through Stacked Silicon Circuitry Using Integrated thin Film InP-Based Emitters and Detectors

Published

Journal Article

To demonstrate optical communication through stacked silicon circuitry, thin film InGaAsP-based emitters and photodetectors have been bonded directly onto silicon circuitry. These optoelectronic devices operate at a wavelength to which silicon is transparent. The thin film emitters and detectors were integrated onto a MOSIS foundry silicon CMOS integrated circuit which contained driver and amplifier circuits. Bidirectional vertical optical communication between two layers of circuitry was demonstrated by stacking the layers, exciting the emitter driver circuit on one layer with an electrical signal, and measuring the output electrical signal from the detector amplifier located on the other circuit in the vertical stack. © 1995 IEEE. All rights reserved.

Full Text

Duke Authors

Cited Authors

  • Jokerst, NM; Camperi-Ginestet, C; Buchanan, B; Wilkinson, S; Brooke, MA

Published Date

  • January 1, 1995

Published In

Volume / Issue

  • 7 / 9

Start / End Page

  • 1028 - 1030

Electronic International Standard Serial Number (EISSN)

  • 1941-0174

International Standard Serial Number (ISSN)

  • 1041-1135

Digital Object Identifier (DOI)

  • 10.1109/68.414691

Citation Source

  • Scopus